Multi-layered dielectric films which can improve the performance characteristics of a microelectronic device are provided as well as methods of manufacturing the same. The multi-layered dielectric film includes a single component oxide layer made of a single component oxide, and composite components oxide layers made of a composite components oxide including two or more different components formed along either side of the single component oxide layer without a layered structure.

 
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< Multiple level cell phase-change memory devices having controlled resistance drift parameter, memory systems employing such devices and methods of reading memory devices

> Dual-gate device and method

> Non-volatile memory with boost structures

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