In a method of controlling resistance drift in a memory cell of a resistance-changeable material memory device, the resistance changeable material in the memory cell is treated so that a drift parameter for the memory cell is less than about 0.18, wherein a change in resistance of a memory cell over the time period is determined according to the relationship: R.sub.drift=R.sub.initial.times.t.sup..alpha.; where R.sub.drift represents a final resistance of the memory cell following the time period, R.sub.initial represents the initial resistance of the memory cell following the programming operation, t represents the time period; and .alpha. represents the drift parameter.