An interlevel dielectric layer, such as a silicon oxide layer, is selectively etched using a plasma etch chemistry including a silicon species and a halide species and also preferably a carbon species and an oxygen species. The silicon species can be generated from a silicon compound, such as Si.sub.xM.sub.yH.sub.z, where "Si" is silicon, "M" is one or more halogens, "H" is hydrogen and x.gtoreq.1, y.gtoreq.0 and z.gtoreq.0. The carbon species can be generated from a carbon compound, such as C.sub..alpha.M.sub..beta.H.sub..gamma., where "C" is carbon, "M" is one or more halogens, "H" is hydrogen, and .alpha..gtoreq.1, .beta..gtoreq.0 and .gamma..gtoreq.0. The oxygen species can be generated from an oxygen compound, such as O.sub.2, which can react with carbon to form a volatile compound.

 
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