The magnetic memory device includes a magnetic shield film 48, and a
magnetoresistive effect element 62 formed over the magnetic shield film
48 and including a magnetic layer 52, a non-magnetic layer 54 and a
magnetic layer 56, in which a magnetization direction of the first
magnetic layer or the second magnetic layer is reversed by spin
injection, and a second magnetic shield film 68 formed over the side wall
of the magnetoresistive effect element 62. Thus, the arrival of the
leakage magnetic field from the interconnection near the magnetoresistive
effect element 62 can be effectively prevented.