A ferroelectric memory device, which includes a vertical ferroelectric capacitor having an electrode distance smaller than a minimum feature size of lithography technology being used and suitable for the miniaturization, and a method of manufacturing the same are disclosed. According to one aspect of the present invention, it is provided a ferroelectric memory device comprising an MIS transistor formed on a substrate, and a ferroelectric capacitor formed on an interlevel insulator above the MIS transistor, wherein a pair of electrodes of the ferroelectric capacitor are disposed in a channel length direction of the MIS transistor to face each other putting a ferroelectric film in-between, and wherein a distance between the electrodes of the ferroelectric capacitor is smaller than a gate length of the MIS transistor.