To provide a magnetic memory capable of reducing the amount of write current, even when the element size is 0.7 .mu.m or less. Each of storage areas has a transistor for read/write control, which is connected electrically to either one of the fixed layer and the free layer of each magneto-resistance effect element, a wiring that is electrically connected to the other one of the fixed layer and the free layer of each magneto-resistance effect element, and a magnetic yoke that surrounds the wiring and provides a magnetic field to the free layer, and the number of the transistors within each storage area is one.