A semiconductor device includes a semiconductor material, the semiconductor material including a base region and a field stop zone including a first side adjacent the base region and a second side opposite the first side. The field stop zone includes a first dopant implant and a second dopant implant. The first dopant implant has a first dopant concentration maximum and the second dopant implant has a second dopant concentration maximum with the first dopant concentration maximum being less than the second dopant concentration maximum, and being located closer to the second side than the second dopant concentration maximum.