A memory device and method for operating the same are provided. The
example method may be directed to a method of performing a memory
operation on a memory device, and may include applying a negative voltage
bias to the memory device during a programming operation of the memory
device and applying a positive voltage bias to the memory device during
an erasing operation of the memory device. The example memory device may
include a substrate and a gate structure formed on the substrate, the
gate structure exhibiting a faster flat band voltage shift under a
negative voltage bias than under a positive voltage bias, the gate
structure receiving a negative voltage bias during a programming of the
memory device and receiving a positive voltage bias during an erasing
operation of the memory device.