A heterojunction structure composed of a p-type semiconductor thin film
and n-type ZnO-based nanorods epitaxially grown thereon exhibits high
luminescence efficiency property due to facilitated tunneling of
electrons through the nano-sized junction and the use of ZnO having high
exciton energy as a light emitting material, and thus it can be
advantageously used in nano-devices such as LED, field effect transistor,
photodetector, sensor, etc.