A semiconductor laser device that can be operated at high power and that
has a structure which can suppress kink, reduce loss and stabilize the
direction of polarization simultaneously, and in which an optical pattern
decreases monotonously as receding from an active layer and the crystal
composition can be easily controlled. A plurality of layers of high
refractive index different in the composition from that of the cladding
layer are introduced being dispersed over a range wider than the spot
size for directing light closer to the lower cladding layer of the
semiconductor laser and stabilizing the direction of polarization. The
electric field intensity is decreased monotonously as receding from the
active layer for the optical pattern.