A process for fabricating lasers capable of emitting blue light wherein a GaN wafer is etched to form laser waveguides and mirrors using a temperature of over 500.degree. C. and an ion beam in excess of 500 V in CAIBE, and wherein said laser waveguide has inwardly angled sidewalls.

 
Web www.patentalert.com

< Semiconductor laser device, light scanner, and image forming apparatus

> Semiconductor laser diode

> Semiconductor laser device

~ 00523