A method and resulting high electron mobility transistor comprised of a substrate and a relaxed silicon-germanium layer formed over the substrate. A dopant layer is formed within the relaxed silicon-germanium layer. The dopant layer contains carbon and/or boron and has a full-width half-maximum (FWHM) thickness value of less than approximately 70 nanometers. A strained silicon layer is formed over the relaxed silicon-germanium layer and is configured to act as quantum well device.