Both end portions of a magneto-resistive effect film form a junction taper shape and, at both end portions forming the junction taper shape, a pair of bias magnetic field applying layers are disposed via underlayers for applying a longitudinal bias magnetic field to a soft magnetic layer. Each of the underlayers is formed by a thin film made of at least one element selected from a group of Ru, Ti, Zr, Hf, and Zn or an alloy thin film containing, as a main component, at least one element selected from the group. Each of the bias magnetic field applying layers formed on the underlayers is formed by a hard magnetic layer and has a thickness of 200 .ANG. or less (not including zero).