In forming a narrow pattern, it is difficult to form a lift-off resist pattern with an overhang shape. Accordingly, it results in a phenomenon in which the angle at the end of the GMR layer is reduced to 45.degree. or less. It is necessary to provide a lift-off resist pattern that forms the end of the GMR film to be at an angle of as abrupt as 45.degree. or more and ensures lift-off. According to one embodiment of the invention, a method of manufacturing a thin film magnetic head of using a resist pattern comprises three-layered organic films of a PMGI layer, an organic film layer and an image layer from the lower layer as a lift-off resist pattern, etching the organic film layer and the PMGI layer by using the imaging layer as a mask, then etching a GMR layer by using, as a mask, a lift-off resist pattern in which the organic film layer and the imaging layer are formed into the overhang shape prepared by etching the PMGI layer in a developer solution, and then forming a magnetic domain control film and an electrode film on both ends of the GMR layer by using a lift-off method.