By performing a plasma treatment for efficiently sealing the surface of a stressed dielectric layer containing silicon nitride, an enhanced performance during the patterning of contact openings may be achieved, since nitrogen-induced resist poisoning may be significantly reduced during the selective patterning of stressed layers of different types of intrinsic stress.

 
Web www.patentalert.com

< Control of photoelectrochemical (PEC) etching by modification of the local electrochemical potential of the semiconductor structure relative to the electrolyte

> Method of manufacturing a semiconductor device having a pre-metal dielectric liner

> Semiconductor device and method of fabricating the same

~ 00528