A solid-state imaging device includes a light sensor formed in a semiconductor substrate. In addition, the solid-state imaging device includes a light block layer with an opening formed through the light block layer over at least a portion of the light sensor. Furthermore, at least one sidewall of the light block layer facing the opening is concave shaped for reducing smear phenomenon.

 
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< Method for forming fine patterns of a semiconductor device using double patterning

> Semiconductor device and fabrication process thereof

> Control of photoelectrochemical (PEC) etching by modification of the local electrochemical potential of the semiconductor structure relative to the electrolyte
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