A method for forming fine patterns of a semiconductor device is disclosed.
The method includes forming an etch film on a substrate, forming a
protection film on the etch film, forming a hard mask layer on the
protection film, and forming a plurality of first mask patterns
characterized by a first pitch on the hard mask layer. The method further
comprises forming a plurality of second mask patterns, forming hard mask
patterns exposing portions of the protection film by etching the hard
mask layer using the first and second mask patterns as an etch mask, and
removing the first and second mask patterns. The method still further
comprises exposing portions of the etch film and forming a plurality of
fine patterns characterized by a second pitch equal to half of the first
pitch by etching the etch film using at least the hard mask patterns as
an etch mask.