A nanostructured integrated circuit including a nanostructured element and a thin film transistor (TFT) and capacitor formed along the nanostructured element. The nanostructured element includes: an inner semiconductor material; and an outer insulating layer. The TFT includes: the inner semiconductor material of the nanostructured element; a source electrode electrically coupled to a source portion of the inner semiconductor material; a drain electrode electrically coupled to a drain portion of the inner semiconductor material; a gate portion of the outer insulating layer located between the source electrode and the drain electrode; and a gate electrode formed on the gate portion. The capacitor includes: a capacitor portion of the outer insulating layer of the nanostructured element; and a capacitor electrode formed on the capacitor portion. The capacitor portion of the outer insulating layer is located between the gate portion of the outer insulating layer and either the drain or source electrode.