The present invention provides a versatile system for producing sense transistors having optimized thermal and parametric matching with an associated power transistor. A power transistor is formed, having a plurality of alternating source and drain structures, with a plurality of gate structures interposed there between. At a desired location within the power transistor--which may be in a central location, or symmetrically distributed--one or more sense transistors are formed from an isolated portion of either a drain or source structure.