A TFT having a dual buffer structure, a method of fabricating the same,
and a flat panel display having the TFT, and a method of fabricating the
same are provided. The TFT includes a first buffer layer formed of an
amorphous silicon layer on a substrate, a second buffer layer formed on
the first buffer layer. The TFT also includes a semiconductor layer
formed on the second buffer layer and a gate electrode formed on the
semiconductor layer. The dual buffer structure provides better barrier to
impurities diffusing from the substrate, and also acts as a black matrix
to reduce unwanted reflections and is a source of hydrogen to passivate
other layers.