The present invention provides processes for producing horizontal
nanowires that are separate and oriented and allow for processing
directly on a substrate material. The nanowires grow horizontally by
suppressing vertical growth from a nucleating particle, such as a metal
film. The present invention also provides for horizontal nanowire growth
from nucleating particles on the edges of nanometer-sized steps.
Following processing, the nanowires can be removed from the substrate and
transferred to other substrates. The present invention also provides for
nanowires produced by these processes and electronic devices comprising
these nanowires. The present invention also provides for nanowire growth
apparatus that provide horizontal nanowires, and processes for producing
nanowire devices.