Semiconductor integrated circuit apparatus and electronic apparatus having
a leakage current detection circuit where arbitrarily set leakage current
detection ratio does not depend on power supply voltage, temperature, or
manufacturing variations, and where leakage current detection is
straightforward. Semiconductor integrated circuit apparatus extracts a
stable potential from the center of two NchMIS transistors, amplifies
drain current of an NchMOS transistor taking this potential as a gate
potential to a current value of an arbitrary ratio using current mirror
circuit, makes this current value flow through NchMOS transistor with the
gate and drain connected, and applies drain potential of this NchMOS
transistor to the gate of leakage current detection NchMOS transistor.