The present invention relates to improved metal-oxide-semiconductor field
effect transistor (MOSFET) devices with stress-inducing structures
located at the source and drain (S/D) regions. Specifically, each MOSFET
comprises source and drain regions located in a semiconductor substrate.
Such source and drain regions comprise recesses with one or more sidewall
surfaces that are slanted in relation to an upper surface of the
semiconductor substrate. A stress-inducing dielectric layer is located
over the slanted sidewall surfaces of the recesses at the source and
drain regions. Such MOSFETs can be readily formed by crystallographic
etching of the semiconductor substrate to form the recesses with the
slanted sidewall surfaces, followed by deposition of a stress-inducing
dielectric layer thereover.