A method of forming a gate stack for semiconductor electronic devices utilizing wafer bonding of at least one structure containing a high-k dielectric material is provided. The method of the present invention includes a step of first selecting a first and second structure having a major surface respectively. In accordance with the present invention, at least one, or both, of the first and second structures includes at least a high-k dielectric material. Next, the major surfaces of the first and second structures are bonded together to provide a bonded structure containing at least the high-k dielectric material of a gate stack.