A semiconductor device includes a damascene structure and an air gap embedded in the damascene dielectric layer. A method of manufacturing a semiconductor device includes depositing a metal barrier in advance as an etch stop, forming a copper damascene interconnect structure, forming an air gap, and depositing a photosensitive passivation material on the air gap.

 
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< Memory having cap structure for magnetoresistive junction and method for structuring the same

> Input protection circuit preventing electrostatic discharge damage of semiconductor integrated circuit

> Recycling by mechanical means of a wafer comprising a multilayer structure after taking-off a thin layer thereof
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