A semiconductor component that includes an integrated passive device and
method for manufacturing the semiconductor component. Vertically
integrated passive devices are manufactured above a substrate. In
accordance with one embodiment, a resistor is manufactured in a first
level above a substrate, a capacitor is manufactured in a second level
that is vertically above the first level, and a copper inductor is
manufactured in a third level that is vertically above the second level.
The capacitor has aluminum plates. In accordance with another embodiment,
a resistor is manufactured in a first level above a substrate, a copper
inductor is manufactured in a second level that is vertically above the
first level, and a capacitor is manufactured in a third level that is
vertically above the second level. The capacitor may have aluminum plates
or a portion of the copper inductor may serve as one of its plates.