Electrostatic discharge (ESD) protection is provided for an integrated
circuit. Snap back from a lower initial critical voltage and critical
current is provided, as compared to contemporary designs. A dynamic
region having doped regions is formed on a substrate, interconnects
contacting the dynamic region. The dynamic region includes an Nwell
region, a Pwell region and shallow diffusions, defining a PNP region, an
NPN region and a voltage Breakdown region. In an aspect, the Nwell region
includes a first N+ contact, a first P+ contact and an N+ doped
enhancement, while the Pwell region includes a second N+ contact, a
second P+ contact and a P+ doped enhancement. The N+ doped enhancement
contacts the P+ doped enhancement forming the breakdown voltage region
therebetween, in one case forming a buried breakdown voltage junction.
Independent control is provided over breakdown voltage, NPN critical
voltage, NPN critical current and PNP critical current, by varying doping
levels, widths and positioning of various doping regions.