The invention relates to an active matrix structure and method for manufacturing the active matrix structure for a display device, wherein the structure includes: providing a matrix substrate with a number of row lines and a number of column lines, with each point of intersection between one of the row lines and one of the column lines being assigned a passage through the matrix substrate for generating a pixel, depositing a layer of p-silicon on the matrix substrate, for each pixel, creating an n.sup.+-doped region in the p-silicon, which n.sup.+-doped region is provided from the passage as far as a free surface of the p-silicon layer, and creating a p.sup.+-doped region within the n.sup.+-doped region such that a layer of the n.sup.+-doped region remains, and applying a layer made of a matrix material which has particles of electronic ink contained therein, or an organic light-emitting diode layer on a free surface of the final structure resulting from step c).