A method of programming a nonvolatile memory cell includes applying at least one initialization pulse having a duration of at least 1 ms, followed by applying plural programming pulses having a duration of less than 1 ms. The cell includes a steering element located in series with a storage element, and the storage element includes a carbon material.

 
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< Multilevel nonvolatile memory device containing a carbon storage material and methods of making and using same

> DAMASCENE INTEGRATION METHODS FOR GRAPHITIC FILMS IN THREE-DIMENSIONAL MEMORIES AND MEMORIES FORMED THEREFROM

> Method of making nonvolatile memory cell containing carbon resistivity switching as a storage element by low temperature processing
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