A method for forming a liquid crystal display is disclosed. A substrate comprising a thin film transistor area and a pixel area is provided. A gate line, a gate dielectric layer, an active layer and a doped layer are formed overlying the substrate sequentially. A metal layer is formed overlying the doped layer. The metal layer, doped layer and the active layer in the thin film transistor area are defined to form a thin film transistor. The metal layer in the pixel area is defined to form a first metal portion of a first thickness and a second metal portion of a second portion, wherein the first metal portion acts as a contact region, the first thickness exceeds the second thickness, and the second thickness is sufficient to partially reflect and partially transmit incident light to form a transflective region in the pixel area.