A magnetic memory device includes a memory cell including magnetoresistance effect elements MTJ1, MTJ2 and a select transistor connected to the connection node of the magnetoresistance effect elements MTJ1, MTJ2, a first signal line extended in a first direction and connected to the magnetoresistance effect element MTJ1, a second signal line extended in the first direction and connected to the magnetoresistance effect element MTJ2, and a third signal line extended in a second direction and crossing the first signal line in a region where the magnetoresistance effect element MTJ1 is formed and crossing the second signal line in a region where the magnetoresistance effect element MTJ2 is formed. When memory information is written into the memory cell, the memory information to be memorized is switched by directions of write currents to be flowed to the first and the second signal lines.