An electronic device comprises a body including a single crystal region on a major surface of the body. The single crystal region has a hexagonal crystal lattice that is substantially lattice-matched to graphene, and a at least one epitaxial layer of graphene is disposed on the single crystal region. In a currently preferred embodiment, the single crystal region comprises multilayered hexagonal BN. A method of making such an electronic device comprises the steps of: (a) providing a body including a single crystal region on a major surface of the body. The single crystal region has a hexagonal crystal lattice that is substantially lattice-matched to graphene, and (b) epitaxially forming a at least one graphene layer on that region. In a currently preferred embodiment, step (a) further includes the steps of (a1) providing a single crystal substrate of graphite and (a2) epitaxially forming multilayered single crystal hexagonal BN on the substrate. The hexagonal BN layer has a surface region substantially lattice-matched to graphene, and step (b) includes epitaxially forming at least one graphene layer on the surface region of the hexagonal BN layer. Applications to FETs are described.