In a device including multiple metal-insulator-metal (MIM) capacitors and a method of fabricating the same, the multiple MIM capacitors comprise a lower interconnect in a substrate; a first dielectric layer on the lower interconnect; a first intermediate electrode pattern on the first dielectric layer overlapping with the lower interconnect; a second intermediate electrode pattern on the first dielectric layer and spaced apart from the first intermediate electrode pattern in a same plane of the device as the first intermediate electrode pattern; a second dielectric pattern on the second intermediate electrode pattern; and an upper electrode pattern on the second dielectric pattern.