A semiconductor laser has a reflectance of the front facet coating film or the rear facet coating film dramatically that decreases at wavelengths greater than a predetermined wavelength. This characteristic causes the loss of the semiconductor laser to dramatically increase at wavelengths greater than the predetermined wavelength. As a result, the oscillation wavelength of the semiconductor laser at high temperatures is clamped to around the predetermined wavelength.

 
Web www.patentalert.com

< Laser apparatus and method for harmonic beam generation

> Distributed feedback semiconductor laser including wavelength monitoring section

> Extended wavelength strained layer lasers having nitrogen disposed therein
~ 00562