Nonvolatile memory elements are provided that have resistive switching
metal oxides. The nonvolatile memory elements may be formed by depositing
a metal-containing material on a silicon-containing material. The
metal-containing material may be oxidized to form a resistive-switching
metal oxide. The silicon in the silicon-containing material reacts with
the metal in the metal-containing material when heat is applied. This
forms a metal silicide lower electrode for the nonvolatile memory
element. An upper electrode may be deposited on top of the metal oxide.
Because the silicon in the silicon-containing layer reacts with some of
the metal in the metal-containing layer, the resistive-switching metal
oxide that is formed is metal deficient when compared to a stoichiometric
metal oxide formed from the same metal.