There is disclosed a rework process for a photoresist film over a substrate having at least a first antireflection silicone resin film and the photoresist film over the first silicone resin film comprising: at least removing the photoresist film with a solvent while leaving the first silicone resin film unremoved; forming a second antireflection silicone resin film over the first silicone resin film; and forming a photoresist film again over the second silicone resin film. There can be provided a rework process for a photoresist film that can be conducted more easily at lower cost and provide more certainly an excellent resist pattern.