The present invention relates to metallic interconnect having an interlayer dielectric thereover, the metallic interconnect having an upper surface substantially free from oxidation. The metallic interconnect may have an exposed upper surface thereon that is passivated by a nitrogen containing compound.

 
Web www.patentalert.com

< Semiconductor device including a barrier metal film

> Interconnection between different circuit types

> Electrical open/short contact alignment structure for active region vs. gate region
~ 00577