A vertical power semiconductor component (1) having a top side (3) and a rear side (4) is provided. The top side (3) has at least one first electrode contact area (8) and at least one control electrode area (9) and the rear side (4) has a second electrode contact area (7). A first metallization (10) having a thickness a is arranged on the first electrode contact area (8). A second metallization (11) having a thickness b is arranged on the control electrode area (9). A third metallization (6) having a thickness c is arranged on the second electrode contact area (7). The thickness a of the first metallization (10) is at least 10 times thicker than the thickness b of the second metallization (11).