An integrated circuit includes a contact, a first spacer, and a first electrode including a first portion and a second portion. The second portion contacts the contact and is defined by the first spacer. The integrated circuit includes a second electrode and resistivity changing material between the second electrode and the first portion of the first electrode.

 
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> Method of manufacturing a strained semiconductor layer, method of manufacturing a semiconductor device and semiconductor substrate suitable for use in such a method including having a thin delta profile layer of germanium close to the bottom of the strained layer

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