An exemplary method for fabricating a polysilicon layer includes the following steps. A substrate (10) is provided and an amorphous silicon layer (12) is formed over the substrate. An excimer laser generator (13) for generating a pulse excimer laser beams collectively having the shape of a generally rectangular shaft is provided to melt a first area (15) of the amorphous silicon layer with the pulse excimer laser beams. The excimer laser generator is moved a distance to melt a second area of the amorphous layer spaced a short distance away from the first area. At least a subsequent third melted area spaced a short distance away from the second melted area is formed, with each subsequent melted area is spaced as short distance away from the immediately preceding melted area.