A vertical organic transistor and a method for fabricating the same are
provided, wherein an emitter, a grid with openings and a collector are
sequentially arranged above a substrate. Two organic semiconductor layers
are interposed respectively between the emitter and the grid with
openings and between the grid with openings and the collector. The
channel length is simply decided by the thickness of the organic
semiconductor layers. The collector current depends on the
space-charge-limited current contributed by the potential difference
between the emitter and the openings of the grid. And the grid voltage
can thus effectively control the collector current. Further, the
fabrication process of the vertical organic transistor of the present
invention is simple and exempt from using the photolithographic process.