Methods for removing photoresist from semiconductor structures are provided. In an exemplary embodiment, a method for removing photoresist from a semiconductor structure having a high-k dielectric material layer overlying a substrate comprises depositing a photoresist overlying the high-k dielectric material layer and patterning the photoresist. The temperature of the substrate is adjusted to a temperature of no less than about 400.degree. C. and hydrogen gas is excited to form a hydrogen plasma of excited H and H.sub.2 species. The photoresist is subjected to the excited H and H.sub.2 species from the hydrogen plasma.