Methods in accordance with this invention form a microelectronic structure
by forming a carbon nano-tube ("CNT") layer, and forming a boron nitride
layer ("BN liner") above the CNT layer, wherein the BN liner comprises:
(1) a first portion disposed above and in contact with the CNT layer;
and/or (2) a second portion disposed in and/or around one or more carbon
nano-tubes in the CNT layer. Numerous other aspects are provided.