Methods in accordance with this invention form microelectronic structures, such as non-volatile memories, that include carbon layers, such as carbon nanotube ("CNT") films, in a way that protects the CNT film against damage and short-circuiting. Microelectronic structures, such as non-volatile memories, in accordance with this invention are formed in accordance with such techniques.

 
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> ELECTRONIC DEVICES INCLUDING CARBON NANO-TUBE FILMS HAVING BORON NITRIDE-BASED LINERS, AND METHODS OF FORMING THE SAME

> ELECTRONIC DEVICES INCLUDING CARBON NANO-TUBE FILMS HAVING CARBON-BASED LINERS, AND METHODS OF FORMING THE SAME

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