A programmable metallization cell (PMC) that includes an active electrode; a nanoporous layer disposed on the active electrode, the nanoporous layer comprising a plurality of nanopores and a dielectric material; and an inert electrode disposed on the nanoporous layer. Other embodiments include forming the active electrode from silver iodide, copper iodide, silver sulfide, copper sulfide, silver selenide, or copper selenide and applying a positive bias to the active electrode that causes silver or copper to migrate into the nanopores. Methods of formation are also disclosed.

 
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< RAIL SECTION THAT FACILITATES RAIL SECTION ALIGNMENT

< MEMORY CELLS INCLUDING NANOPOROUS LAYERS CONTAINING CONDUCTIVE MATERIAL

> MIRRORED-GATE CELL FOR NON-VOLATILE MEMORY

> POLARITY DEPENDENT SWITCH FOR RESISTIVE SENSE MEMORY

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