A method for setting a reference potential of a current sensor in a power
semiconductor device is disclosed. On the basis of a specific geometry
and a typical two-dimensional potential distribution of the power
semiconductor device, a plurality of tapping points is predetermined on
an area of the power semiconductor device. On the basis of the specific
geometry of the power semiconductor device, a line course between the
tapping points and a measuring point for measuring a potential average
value is determined and realized. Respective potential values are
detected at the tapping points and fed to the measuring point. The
potential average value is determined at the measuring point. The
potential of the current sensor is set to the potential average value
thus determined.