The present invention discloses a bis-triphenylsilyl compound and its applications as a host material, electron transport material, or hole transport material in an organic electronic device. The general structure of the bis-triphenylsilyl compound is as follows: ##STR00001## where G represents any atomic moiety or single bond of the functional group selected from the group consisting of the following: aryl group, cyclene group, and heterocyclic ring group; and R.sup.1.about.R.sup.32 represent substituents on aryl groups.