A method of programming a memory cell comprises applying a reverse bias to the memory cell using a temporary resistor in series with the memory cell. The memory cell comprises a diode and a resistivity switching material element in series. The state of the resistivity switching material element changes from a first initial state to a second state different from the first state.

 
Web www.patentalert.com

< ELECTROSTATIC DISCHARGE PROTECTIVE CIRCUIT HAVING RISE TIME DETECTOR AND DISCHARGE SUSTAINING CIRCUITRY

< Method of programming a nonvolatile memory device containing a carbon storage material

> Quad memory cell and method of making same

> Automatically Adding User Names to Server User List
~ 00619