A nonvolatile memory cell includes a steering element located in series with a storage element, where the storage element comprises a carbon material. A method of programming the cell includes applying a reset pulse to change a resistivity state of the carbon material from a first state to a second state which is higher than the first state, and applying a set pulse to change a resistivity state of the carbon material from the second state to a third state which is lower than the second state. A fall time of the reset pulse is shorter than a fall time of the set pulse.

 
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