A plasma reactor system for processing a wafer in which respective comparators are coupled to the respective RF transient sensors which are coupled in turn to respective RF power application points. The comparators have respective comparison thresholds. The system further includes a controller programmed to updating the respective thresholds of the comparators with respective updated thresholds for different ones of the steps of the process recipe.

 
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< Metal and alloy silicides on a single silicon wafer

< Treatment of plasma damaged layer for critical dimension retention, pore sealing and repair

> Method of wafer level transient sensing, threshold comparison and arc flag generation/deactivation

> Method and apparatus for biasing a floating node in an integrated circuit

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